Silicon carbide, as a third-generation semiconductor material, has been widely used in the new energy industry. Meanwhile, due to its high hardness (Mohs hardness of 9), traditional diamond wire cutting methods exhibit disadvantages such as high losses and poor cutting quality.
Water jet guided laser processing of silicon carbide can achieve good cutting surfaces and cutting speeds, and can replace existing processes in the processing of certain silicon carbide processing.
Watlaser could cut silicon carbide more than 25mm-depth in single cutting, the cutting efficiency reduce rapidly if the depth is over 25 mm, what means it's not economic then.
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